Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure-Reference-Cited by-同舟云学术

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Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Published:2020-06-01 Issue:6 Volume:10 Page:065111
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zheng Xue-Feng¹^ORCID,Chen Guan-Jun¹^ORCID,Wang Xiao-Hu¹,Wang Ying-Zhe¹,Wang Chong¹,Mao Wei¹,Lu Yang¹^ORCID,Hou Bin¹^ORCID,Mi Min-Han¹,Lv Ling¹,Cao Yan-Rong¹,Zhu Qing¹^ORCID,Guo Gang²,Ma Pei-Jun¹,Ma Xiao-Hua¹,Hao Yue¹

Affiliation:

1. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China

2. National Innovation Center of Radiation Application, P.O. Box 275, Beijing 102413, People’s Republic of China

Funder

National Pre-Research Foundation of China

Fund of Innovation Center of Radiation Application

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0007650

Reference26 articles.

1. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

2. Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures

3. Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers

4. Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage

5. Neutron irradiation effects on gallium nitride-based Schottky diodes

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage;Journal of Science: Advanced Materials and Devices;2024-06

2. Traffic flow prediction model based on improved variational mode decomposition and error correction;Alexandria Engineering Journal;2023-08

3. Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon;Applied Physics Letters;2023-04-03

4. Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation;AIP Advances;2023-04-01

5. Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure;IEEE Transactions on Nuclear Science;2021-11

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