Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2140482
Reference19 articles.
1. Thermodynamic stability of binary oxides in contact with silicon
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Band offsets of wide-band-gap oxides and implications for future electronic devices
4. Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films
5. Suppression of Crystallization of Tantalum Oxide Thin Film by Doping with Zirconium
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