Cryogenic mechanical loss of amorphous germania and titania-doped germania thin films

Abstract

Abstract The mechanical loss of amorphous thin films of germania (GeO2) and titania-doped germania (Ti:GeO2) deposited by ion-beam sputtering onto silicon double-paddle oscillators was studied from 10 K to 290 K. Undoped germania was found to show a wide cryogenic mechanical loss peak centered at ∼ 60  K with ϕ = 3.1 × 10 − 3 , which decreases to 1.1 × 10 − 3 as Ti-concentration increases to 44%. In addition to decreasing the height of this low-temperature peak, Ti-doping increases its width, and shifts its position toward lower temperatures. Annealing reduces the room temperature mechanical loss of Ti:GeO2 and increases its cryogenic mechanical loss, which is consistent with trends observed in most amorphous oxides.