Self-screening induced abnormal stability of ferroelectric phase in GeTe ultrathin films-Reference-Cited by-同舟云学术

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Self-screening induced abnormal stability of ferroelectric phase in GeTe ultrathin films

Published:2018-12-03 Issue:23 Volume:113 Page:232903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Xiaojie¹,Zhou Lingjun¹,Feng Jinlong¹,Wang Sheng¹^ORCID,Qian Hang¹,Tong Hao¹^ORCID,Miao Xiangshui¹

Affiliation:

1. Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Funder

Major special projects for technological innovation of Hubei province

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5049888

Reference57 articles.

1. Applications of Modern Ferroelectrics

2. Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories

3. An All-Printed Ferroelectric Active Matrix Sensor Network Based on Only Five Functional Materials Forming a Touchless Control Interface

4. Ferroelectric thin films for micro-sensors and actuators: a review

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron beam lithography of GeTe through polymorphic phase transformation;Nanoscale Horizons;2024

2. One-step method to simultaneously synthesize separable Te and GeTe nanosheets;Nano Research;2022-05-05

3. Manipulation of the Rashba effect in layered tellurides MTe (M = Ge, Sn, Pb);Journal of Materials Chemistry C;2020

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