Electron beam lithography of GeTe through polymorphic phase transformation-Reference-Cited by-同舟云学术

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Electron beam lithography of GeTe through polymorphic phase transformation

Published:2024 Issue:9 Volume:9 Page:1574-1581
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Zhang Hu¹²³,Li Meng⁴,Mi Shao-Bo¹^ORCID,Cheng Shao-Dong³,Lu Lu¹,Chen Zhi-Gang⁴^ORCID

Affiliation:

1. Ji Hua Laboratory, Foshan 528200, China

2. School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710119, China

3. State Key Laboratory for Mechanical Behavior of Materials & School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China

4. School of Chemistry & Physics, Faculty of Science, Queensland University of Technology, Queensland 4000, Australia

Abstract

An atomic-scale electron beam lithography technique is adopted to fabricate GeTe-based quantum devices compromising nanopillars or superlattices of c- and h-GeTe in α-GeTe.

Funder

Australian Research Council

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D4NH00035H

Reference61 articles.

1. Electrical Behavior of Phase-Change Memory Cells Based on GeTe

2. Electrical Phase-Change Memory: Fundamentals and State of the Art

3. Lattice dynamics and structure of GeTe, SnTe and PbTe

4. Resonant bonding in crystalline phase-change materials

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