Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories-Reference-Cited by-同舟云学术

Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories

Published:2015-07-29 Issue:8 Volume:9 Page:8089-8098
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lipatov Alexey¹,Sharma Pankaj¹,Gruverman Alexei¹,Sinitskii Alexander¹

Affiliation:

1. Department of Chemistry, ‡Department of Physics and Astronomy, and §Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, United States

Funder

Division of Materials Research

Semiconductor Research Corporation

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b02078

Reference51 articles.

1. The rise of graphene

2. Gate-controlled nonvolatile graphene-ferroelectric memory

3. Graphene Field-Effect Transistors with Ferroelectric Gating

4. Nonvolatile memory devices based on few-layer graphene films

5. Graphene–Ferroelectric Hybrid Structure for Flexible Transparent Electrodes

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