Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates
Author:
Affiliation:
1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
2. JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan
Funder
Gran-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology in Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4901262
Reference32 articles.
1. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
2. Epitaxial Thin Film Crystalline Silicon Solar Cells on Low Cost Silicon Carriers
3. Polycrystalline Silicon Thin-Films Formed by the Aluminum-Induced Layer Exchange (ALILE) Process
4. Low-Temperature Solid Phase Epitaxial Regrowth of Silicon for Stacked Static Random Memory Application
5. Hybrid-orientation technology (HOT): opportunities and challenges
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