Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379784
Reference9 articles.
1. Type‐II quantum‐well lasers for the mid‐wavelength infrared
2. Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer‐quantum well
3. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
4. Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range
5. Theory of an Optical Maser
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2. Room‐temperature laser operation of a (Ga,In)As/Ga(As,Bi)/(Ga,In)As W‐type laser diode;Electronics Letters;2021-11-07
3. Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates;Crystal Growth & Design;2021-09-29
4. Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb ‘W’-lasers for optical communications;Journal of Physics D: Applied Physics;2021-06-30
5. High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm;Scientific Reports;2018-01-23
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