High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
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Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-19189-1.pdf
Reference26 articles.
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2. Zah, C. E. et al. High-Performance Uncooled 1.3 μm AlxGayIn1-x-yAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications. IEEE J. Quantum Electron. 30, 511–523, https://doi.org/10.1109/3.283799 (1994).
3. Chen, T. R. et al. Low-Threshold and High-Temperature Operation of InGaAlAs-InP Lasers. IEEE Photon. Technol. Lett. 9, 17–18, https://doi.org/10.1109/68.554156 (1997).
4. Higashi, T. et al. Observation of reduced nonradiative current in 1.3 μm AlGaInAs-InP strained MQW lasers. IEEE Photon. Technol. Lett. 11, 409–411, https://doi.org/10.1109/68.752531 (1999).
5. Sweeney, S. J., Higashi, T., Adams, A. R., Uchida, T. & Fujii, T. A comparison of AlGaInAs and InGaAsP-based 1.3 μm semiconductor lasers using high pressure. High Press. Res. 18, 49–55, https://doi.org/10.1080/08957950008200947 (2000).
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