Chemical etch rates in HF solutions as a function of thickness of thermal SiO2and buried SiO2formed by oxygen implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348882
Reference24 articles.
1. Electron spin resonance of defects in silicon‐on‐insulator structures formed by oxygen implantation: Influence of γ irradiation
2. Dissimilarity between thermal oxide and buried oxide fabricated by implantation of oxygen on Si revealed by etch rates in HF
3. Correlation of surface morphology and chemical state of Si surfaces to electrical properties
4. Effect of processing on the structure of the Si/SiO2interface
5. Effect of processing on the structure of the Si/SiO2interface
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