Interface investigation using transparent conductor‐oxide‐silicon structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330004
Reference7 articles.
1. Admittance measurements of Si‐SiO2interface states under optical illumination
2. Energy and electric field dependence of Si‐SiO2interface state parameters by optically activated admittance experiments
3. New and unified model for Schottky barrier and III–V insulator interface states formation
4. Chemical reaction and charge redistribution at metal–semiconductor interfaces
5. On the mechanism of degradation in Si/SiOx/Ag metal oxide semiconductor solar cells
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of the Si‐SiO2interface states in thin (70–230 Å) oxide structures;Journal of Applied Physics;1987-06-15
2. An investigation of optically activated Si—SiO2interface states in metal-oxide-silicon structures;IEEE Transactions on Electron Devices;1987-02
3. Fabrication and characterization of SnO2:F/n-Si(poly) solar cells prepared by chemical vapour deposition;Solar Cells;1986-12
4. Determination of silicon‐silicon dioxide interface state properties from admittance measurements under illumination;Journal of Applied Physics;1985-12
5. Dependence of Si‐SiO2interface state density on oxide thickness in structures with ultrathin (79–227 Å) oxides;Applied Physics Letters;1985-12
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