Admittance measurements of Si‐SiO2interface states under optical illumination
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327552
Reference48 articles.
1. Absence of Surface States in Oxidized Si
2. Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO2Interface
3. The Current Understanding of Charges in the Thermally Oxidized Silicon Structure
4. Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables
5. Interface states and interface disorder in the Si-SiO2 system
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