Energy and electric field dependence of Si‐SiO2interface state parameters by optically activated admittance experiments
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327614
Reference12 articles.
1. Interface states on semiconductor/insulator surfaces
2. A determination of interface state energy during the capture of electrons and holes using DLTS
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4. Statistics of trap photoemission in MIS tunnel diodes
5. Electronic states at the silicon-silicon dioxide interface
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