On ternary nitride substrates for visible semiconductor light-emitters
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3425885
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1. InGaN laser diodes with 50 mW output power emitting at 515 nm
2. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
3. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
4. Current Status of GaN-Based Solid-State Lighting
5. 500 nm electrically driven InGaN based laser diodes
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