Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961229
Reference24 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Bipolar one diode–one resistor integration for high-density resistive memory applications
3. High switching endurance in TaOx memristive devices
4. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
5. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
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