Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961229
Reference24 articles.
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4. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
5. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
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