Bipolar one diode–one resistor integration for high-density resistive memory applications-Reference-Cited by-同舟云学术

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Bipolar one diode–one resistor integration for high-density resistive memory applications

Published:2013 Issue:11 Volume:5 Page:4785
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Yingtao,Lv Hangbing,Liu Qi,Long Shibing,Wang Ming,Xie Hongwei,Zhang Kangwei,Huo Zongliang,Liu Ming

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2013/NR/C3NR33370A

Reference48 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Memristive switching mechanism for metal/oxide/metal nanodevices

3. Flexible Memristive Memory Array on Plastic Substrates

4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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