Impact ionization fronts in semiconductors: Numerical evidence of superfast propagation due to nonlocalized preionization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3465302
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1. Spatiotemporal modes of fast avalanche switching of high-voltage layered semiconductor structures: From subnano to picosecond range;Journal of Applied Physics;2020-01-31
2. Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior;Journal of Applied Physics;2017-11-14
3. Switching Mechanisms Triggered by a Collector Voltage Ramp in Avalanche Transistors With Short-Connected Base and Emitter;IEEE Transactions on Electron Devices;2016-08
4. On the picosecond switching of a high-density current (60 kA/cm2) via a Si closing switch based on a superfast ionization front;Semiconductors;2014-08
5. Pulse Power Generation in Nano- and Subnanosecond Range by Means of Ionizing Fronts in Semiconductors: The State of the Art and Future Prospects;IEEE Transactions on Plasma Science;2010-05
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