Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3079524
Reference51 articles.
1. Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon
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5. Control of Defect Concentrations within a Semiconductor through Adsorption
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