Misfit dislocation–related deep levels in InGaAs/GaAs and GaAsSb/GaAs p–i–n heterostructures and the effect of these on the relaxation time of nonequilibrium carriers-Reference-Cited by-同舟云学术

Misfit dislocation–related deep levels in InGaAs/GaAs and GaAsSb/GaAs p–i–n heterostructures and the effect of these on the relaxation time of nonequilibrium carriers

Published:2018-04-28 Issue:16 Volume:123 Page:161588
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sobolev M. M.¹^ORCID,Soldatenkov F. Yu.¹^ORCID,Shul'pina I. L.¹

Affiliation:

1. Ioffe Institute, 194021 St. Petersburg, Russia

Funder

Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5011297

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5. Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures

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