Fast pulsed gallium arsenide heterostructure diodes-Reference-Cited by-同舟云学术

Fast pulsed gallium arsenide heterostructure diodes

Published:2009-08 Issue:8 Volume:43 Page:1055-1057
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Danil’chenko V. G.,Korol’kov V. I.,Soldatenkov F. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378260908017X.pdf

Reference3 articles.

1. S. A. Eremin, D. K. Mokeev, and Yu. R. Nosov, Semiconductor Diodes with Charge Accumulation and Their Applications (Sov. Radio, Moscow, 1966), p. 151 [in Russian].

2. Zh. I. Alferov, V. I. Korol’kov, V. G. Nikitin, M. N. Stepanova, and D. N. Tret’yakov, Pis’ma Zh. Tekh. Fiz. 2(2), 201 (1976) [Sov. Tech. Phys. Lett. 2, 76 (1976)].

3. F. Yu. Soldatenkov, V. G. Danil’chenko, and V. I. Korol’kov, Fiz. Tekh. Poluprovodn. 41, 217 (2007) [Semiconductors 41, 211 (2007)].

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