Control over carrier lifetime in high-voltage p-i-n diodes based on InxGa1-x As/GaAs heterostructures-Reference-Cited by-同舟云学术

Control over carrier lifetime in high-voltage p-i-n diodes based on InxGa1-x As/GaAs heterostructures

Published:2007-02 Issue:2 Volume:41 Page:211-214
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Soldatenkov F. Yu.,Danil’chenko V. G.,Korol’kov V. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607020182.pdf

Reference16 articles.

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2. V. G. Danil’chenko, V. I. Korol’kov, Yu. N. Luzin, et al., Élektron. Tekh., Ser. Élektrovak. Gazorazryad. Prib., No. 5 (88), 30 (1981).

3. L. Ya. Zolotarevskiĭ, Candidate’s Dissertation (Tallin, 1984).

4. G. Achkinazi, M. Leibovich, B. Meyler, et al., U.S. Patent No. 5,733,815 (31 March 1998).

5. L. S. Berman, V. G. Danil’chenko, V. I. Korol’kov, and F. Yu. Soldatenko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 558 (2000) [Semiconductors 34, 541 (2000)].

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