Initial growth mechanism of atomic layer deposited TiN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1760217
Reference7 articles.
1. Nucleation and growth during tungsten atomic layer deposition on SiO2 surfaces
2. Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
3. Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
4. TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films
5. An IR and NMR study of the chemisorption of titanium tetrachloride on silica
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