Characterization of semi‐insulating GaAs wafers by room‐temperature EL2‐related photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100081
Reference14 articles.
1. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
2. Experimental requirements for quantitative mapping of midgap flaw concentration in semi‐insulating GaAs wafers by measurement of near‐infrared transmittance
3. One‐Dimensional Photoluminescence Distribution in Semi‐Insulating GaAs Grown by CZ and HB Methods
4. Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy
5. Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals
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