Characterization of Interface in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face
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Published:2000-05-15
Issue:Part 1, No. 5A
Volume:39
Page:2585-2586
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Noji Masaki,Kiyama Makoto,Tajima Michio
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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1. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001