Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Defect observation in SiC wafers by room-temperature photoluminescence mapping;Materials Science in Semiconductor Processing;2006-02
2. Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping;Applied Physics Letters;2005-02-07
3. Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation;Materials Science Forum;2002-04
4. Sub-μm scale photoluminescence images of wide bandgap semiconductors by cryogenic scanning optical microscope;Materials Science and Engineering: B;2002-04
5. Scanning Photoluminescence Microscope with Sub-micron Resolution and High Optical Throughput at a Low Temperature;Japanese Journal of Applied Physics;2000-10-15
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