Electrical properties of ultrathin HfO2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf(N(CH3)(C2H5))4 and O3-Reference-Cited by-同舟云学术

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Electrical properties of ultrathin HfO2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf(N(CH3)(C2H5))4 and O3

Published:2005-09-26 Issue:13 Volume:87 Page:132904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kamiyama Satoshi,Miura Takayoshi,Nara Yasuo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2072827

Reference21 articles.

1. Hafnium and zirconium silicates for advanced gate dielectrics

2. Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

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1. Chemisorption and Surface Reaction of Hafnium Precursors on the Hydroxylated Si(100) Surface;Coatings;2023-12-16

2. A correlation study of layer growth rate, thickness uniformity, stoichiometry, and hydrogen impurity level in HfO2 thin films grown by ALD between 100°C and 350°C;Applied Surface Science;2020-03

3. Morphology influence in rapid plasma nitriding of hafnium layer for HfSiON film growth;Journal of Vacuum Science & Technology A;2019-12

4. Titanium coverage for plasma-induced uniform HfSiON film from Hf nanoscale islands on SiO2/Si;Journal of Vacuum Science & Technology A;2018-11

5. Nitrogen plasma-induced HfSiON film growth from Hf nanoscale islands on SiO2/Si;Journal of Vacuum Science & Technology A;2018-09

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