Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4765349
Reference22 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions
3. Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed
4. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
5. Simultaneous two-state lasing in quantum-dot lasers
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