Green light-emitting diodes with self-assembled In-rich InGaN quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2790783
Reference20 articles.
1. Comparison of blue and green InGaN∕GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
2. Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters
3. Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition
4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
5. Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain
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1. Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers;Optics Express;2024-01-30
2. Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells;Optics Express;2023-04-26
3. Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs;Nanomaterials;2023-04-14
4. Gradual Carrier Filling Effect in “Green” InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption;ACS Applied Materials & Interfaces;2021-09-08
5. The study of properties of blue-green InGaN/GaN multiple quantum wells grown at different pressures;Superlattices and Microstructures;2021-05
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