Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1607521
Reference28 articles.
1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
2. Effects of macroscopic polarization in III-V nitride multiple quantum wells
3. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
4. Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
5. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
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