Gradual Carrier Filling Effect in “Green” InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption-Reference-Cited by-同舟云学术

Gradual Carrier Filling Effect in “Green” InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption

Published:2021-09-08 Issue:37 Volume:13 Page:45033-45039
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Udai Ankit¹,Aiello Anthony²^ORCID,Aggarwal Tarni¹^ORCID,Saha Dipankar¹^ORCID,Bhattacharya Pallab²

Affiliation:

1. Applied Quantum Mechanics Laboratory, Indian Institute of Technology; Bombay, Powai, Mumbai 400076, India

2. Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, United States

Funder

Department of Science and Technology India

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c11096

Reference23 articles.

1. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop

2. Nitride-based quantum dot visible lasers

3. A InGaN/GaN quantum dot green (λ=524 nm) laser

4. Femto-Second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural Radial Potential Well and Its Dynamic Modulation

5. Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron–electron scattering and diffusion

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1. Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles;Applied Physics Letters;2022-11-21

2. Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy;Nanotechnology;2022-09-05