Analysis of backside-electrode and gate-field-plate effects on buffer-related current collapse in AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3596561
Reference24 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. Trapping effects in GaN and SiC microwave FETs
3. Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors
4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
5. Slow transients observed in AlGaN HFETs: Effects of SiN/sub x/ passivation and UV illumination
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2. Impact of Field-Plate Structure on Parasitic Effects in GaN Based Transistor;2023 Advances in Science and Engineering Technology International Conferences (ASET);2023-02-20
3. Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2019-12-23
4. Trap induced negative differential conductance and back-gated charge redistribution in AlGaN/GaN power devices;Microelectronics Reliability;2019-11
5. Analysis of Breakdown Voltages in AlGaN/GaN HEMTs With Low-${k}$ /High-${k}$ Double Passivation Layers;IEEE Transactions on Device and Materials Reliability;2019-06
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