Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore
2. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5132991
Reference34 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
3. Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator
4. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor
5. 7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering
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3. Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device;Applied Physics Letters;2021-04-19
4. GaN FinFETs and trigate devices for power and RF applications: review and perspective;Semiconductor Science and Technology;2021-03-31
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