Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator-Reference-Cited by-同舟云学术

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Published:2009-11-30 Issue:22 Volume:95 Page:223501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Z. H.,Ng G. I.,Arulkumaran S.,Maung Y. K. T.,Teo K. L.,Foo S. C.,Sahmuganathan V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3268474

Reference17 articles.

1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

2. High-power AlGaN/GaN HEMTs for Ka-band applications

3. Proceedings of 6th International Conference on Solid-State and Integrated Circuit Technology;Adesida I.,2001

4. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

5. Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

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