TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application-Reference-Cited by-同舟云学术

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TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

Published:2011-02 Issue:3 Volume:109 Page:033712
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shin Jungho,Kim Insung,Biju Kuyyadi P.,Jo Minseok,Park Jubong,Lee Joonmyoung,Jung Seungjae,Lee Wootae,Kim Seonghyun,Park Sangsu,Hwang Hyunsang

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3544205

Reference15 articles.

1. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

2. Reproducible switching effect in thin oxide films for memory applications

3. Scaling constraints in nanoelectronic random-access memories

4. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

5. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

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2. Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition;Applied Materials Today;2024-06

3. Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays;Nanomaterials;2024-04-12

4. Effects of Dy on structural, morphology, optical, and resistive switching properties of HfO2 thin films;Thin Solid Films;2024-03

5. Resistive switching behavior and mechanism of HfO_x films with large on/off ratio by structure design;Chinese Physics B;2024-01-01

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