Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction-Reference-Cited by-同舟云学术

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Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

Published:1997-02-24 Issue:8 Volume:70 Page:955-957
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Darhuber A. A.,Holy V.,Stangl J.,Bauer G.,Krost A.,Heinrichsdorff F.,Grundmann M.,Bimberg D.,Ustinov V. M.,Kop’ev P. S.,Kosogov A. O.,Werner P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118463

Reference14 articles.

1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

2. High‐resolution x‐ray diffraction of self‐organized InGaAs/GaAs quantum dot structures

3. Strain relaxation during the initial stages of growth in Ge/Si(001)

4. Strain in Nanoscale Germanium Hut Clusters on Si(001) Studied by X-Ray Diffraction

5. InAs/GaAs quantum dots radiative recombination from zero-dimensional states

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3. Vertical self-organization of Ge1−xMnx nanocolumn multilayers grown on Ge(001) substrates;Modern Physics Letters B;2016-07-30

4. High-resolution X-ray diffraction in crystalline structures with quantum dots;Physics-Uspekhi;2015-05-31

5. Characterization of the Microstructure of GaP Films Grown on {111} Si by Liquid Phase Epitaxy;ACS Applied Materials & Interfaces;2014-10-27

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