The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1762692
Reference22 articles.
1. Lateral dopant profiling in semiconductors by force microscopy using capacitive detection
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5. Observation of metal–oxide–semiconductor transistor operation using scanning capacitance microscopy
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