Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3504249
Reference16 articles.
1. Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing
2. Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-k gate dielectric
3. Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric
4. Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO3 high-k dielectrics
5. Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure
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