Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1909286
Reference14 articles.
1. A silicon nanocrystals based memory
2. Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates
3. Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
4. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films
5. MOS memory structures by very-low-energy-implanted Si in thin SiO2
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