p-type conduction mechanism in continuously varied non-stoichimetric SnOx thin films deposited by reactive sputtering with the impedance control
Author:
Affiliation:
1. Graduate School of Science and Engineering, Aoyama Gakuin University, 5–10–1 Fuchinobe, Chuo, Sagamihara 252–5258, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0005953
Reference30 articles.
1. p-channel thin-film transistor using p-type oxide semiconductor, SnO
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4. Evolution of Defect Structures and Deep Subgap States during Annealing of Amorphous In-Ga-Zn Oxide for Thin-Film Transistors
5. Origin of the Bipolar Doping Behavior of SnO from X-ray Spectroscopy and Density Functional Theory
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