Effects of oxidation process on interface roughness of gate oxides on silicon: X-ray reflectivity study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120780
Reference15 articles.
1. Effect of oxidation ambient on the dielectric breakdown characteristics of thermal oxide films of silicon
2. The degradation of TDDB characteristics of Si0/sub 2//Si/sub 3/N/sub 4//Si0/sub 2/ stacked films caused by surface roughness of Si/sub 3/N/sub 4/ films (DRAMs)
3. Electrical breakdown induced by silicon nitride roughness in thin oxide–nitride–oxide films
4. Dependence of thin-oxide films quality on surface microroughness
5. X-ray and neutron reflectivity for the investigation of polymers
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