Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing-Reference-Cited by-同舟云学术

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Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing

Published:2018-03 Issue:3 Volume:8 Page:035318
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wang Ashu¹^ORCID,Zeng Lingyan¹,Wang Wen²,Calle Fernando³^ORCID

Affiliation:

1. School of Information Science and Engineering, Chengdu University, Chengdu 610106, People’s Republic of China

2. School of Mechanical Engineering, Southwest Jiaotong University, Chengdu 610031, People’s Republic of China

3. ISOM and Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Madrid 28040, Spain

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5020149

Reference24 articles.

1. Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

2. Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

3. Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

4. Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures

5. Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser slice thinning of GaN-on-GaN high electron mobility transistors;Scientific Reports;2022-05-05

2. Low power AlGaN/GaN MEMS pressure sensor for high vacuum application;Sensors and Actuators A: Physical;2020-10

3. Static and dynamic simulation studies on the AlGaN/GaN pressure sensor;Semiconductor Science and Technology;2019-10-22

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