Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors-Reference-Cited by-同舟云学术

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Published:2003-12-08 Issue:23 Volume:83 Page:4845-4847
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kang B. S.,Kim S.,Kim J.,Ren F.,Baik K.,Pearton S. J.,Gila B. P.,Abernathy C. R.,Pan C.-C.,Chen G.-T.,Chyi J.-I.,Chandrasekaran V.,Sheplak M.,Nishida T.,Chu S. N. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1631054

Reference15 articles.

1. Emerging gallium nitride based devices

2. GaN: Processing, defects, and devices

3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

4. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress

5. Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

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