Liquid‐phase epitaxial growth of lattice‐matched InGaAsP on (100)‐InP for the 1.15–1.31‐μm spectral region
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89920
Reference18 articles.
1. Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)
2. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
3. InxGa1−xAsyP1−y/InP heterojunction photodiodes
4. Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions
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2. LPE growth of InP/InGaAsP/InP heterostructures and separate preparation of high-temperature solutions;Inorganic Materials;2007-07
3. Near-field scanning optical microscopy investigation of immiscibility effects in In1−xGaxP films grown by liquid phase epitaxy;Journal of Applied Physics;2002-03
4. Epitaxy and Material Parameters of InGaAsP;Semiconductor Lasers;1993
5. Selective in situ etching of GaInAsP for improved growth interfaces;Journal of Crystal Growth;1990-05
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