Selective in situ etching of GaInAsP for improved growth interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Liquid‐phase epitaxial growth of lattice‐matched InGaAsP on (100)‐InP for the 1.15–1.31‐μm spectral region
2. LPE growth of high purity InP and In1−xGaxP1−yAsy
3. Improved LPE techniques for low threshold lasers at 1.55 μm in the quaternary In-Ga-As-P/InP system
4. Operation characteristics of buried‐stripe GaInAsP/InP DH lasers made by melt‐back method
5. Proc. North American Session of 6th Intern. Symp. on GaAs and Related Compounds, St. Louis, MO, 1976;Hsieh,1977
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of Ga x In1−x As y P1−y using ethyldimethylindium andt-butylphophine;Journal of Electronic Materials;1992-03
2. Liquid phase epitaxy regrowth of two‐dimensional electron gas on GaAs patterned byinsitumeltback;Applied Physics Letters;1990-12-03
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