Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel-Reference-Cited by-同舟云学术

Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel

Published:2010-02-15 Issue:4 Volume:107 Page:044506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Poggi A.,Moscatelli F.,Solmi S.,Armigliato A.,Belsito L.,Nipoti R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3290975

Reference40 articles.

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5. Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

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