Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565171
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1. Electronic and magnetic properties of defect complexes in Eu-doped GaN: First-principles calculations;Physica B: Condensed Matter;2018-08
2. Efficient luminescent center by codoping (Eu,Mg,O) into GaN;Applied Physics Express;2014-07-01
3. Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE;Journal of Luminescence;2012-12
4. Energetics and electronic structure of GaN codoped with Eu and Si;Physical Review B;2012-01-09
5. Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy;Applied Physics Letters;2011-10-24
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