Efficient luminescent center by codoping (Eu,Mg,O) into GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=7/a=071005/pdf
Reference31 articles.
1. Crystal structure refinement of AlN and GaN
2. Optical properties of cubic GaN from 1 to 20 eV
3. Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy
4. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
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3. Photoluminescence of Europium in ZnO and ZnMgO thin films grown by Molecular Beam Epitaxy;Journal of Luminescence;2022-11
4. Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association;Physical Review Materials;2021-03-04
5. Hole-mediated ferromagnetism in a high-magnetic moment material, Gd-doped GaN;Journal of Physics: Condensed Matter;2020-09-04
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