Energetics and electronic structure of GaN codoped with Eu and Si-Reference-Cited by-同舟云学术

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Energetics and electronic structure of GaN codoped with Eu and Si

Published:2012-01-09 Issue:4 Volume:85 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bruno Cruz A. Vallan,Shinde Prashant P.,Kumar Vijay,Zavada John M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.045203/fulltext

Reference27 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

3. The Blue Laser Diode

4. Er doping of GaN during growth by metalorganic molecular beam epitaxy

5. Blue emission from Tm-doped GaN electroluminescent devices

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1. Trivalent Europium Ions Doped CsPbBr ₃ for Highly Efficient and Stable Printable Mesoscopic Perovskite Solar Cells and Driving Water Electrolysis;Solar RRL;2022-07-08

2. Electronic, magnetic, optical and transport properties of wurtzite-GaN doped with rare earth (RE= Pm, Sm, and Eu): First principles approach;Surfaces and Interfaces;2021-06

3. Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association;Physical Review Materials;2021-03-04

4. Research Progress on the Application of Lanthanide-Ion-Doped Phosphor Materials in Perovskite Solar Cells;ACS Sustainable Chemistry & Engineering;2021-01-08

5. Europium (II)‐Doped All‐Inorganic CsPbBr 3 Perovskite Solar Cells with Carbon Electrodes;Solar RRL;2020-09-06

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