Background deep‐level defects in VPE GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323848
Reference8 articles.
1. Background energy level spectroscopy in GaP using thermal release of trapped space charge in Schottky barriers
2. A deep center associated with the presence of nitrogen in GaP
3. Deep‐level controlled lifetime and luminescence efficiency in GaP
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. Determination of deep levels in Cu‐doped GaP using transient‐current spectroscopy
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1. Degradation of commercial high-brightness GaP:N green light emitting diodes;Journal of Applied Physics;1998-06-15
2. Nature of some electron traps in GaP;Semiconductor Science and Technology;1995-05-01
3. Theoretical study of substitutional defects in III-V semiconductors: InP;Physical Review B;1994-04-15
4. Chapter 8 Deep Level Defects in Epitaxial III/V Materials;Imperfections in III/V Materials;1993
5. Effect of substrate temperature on the concentration of point defects in vapour phase epitaxial GaP: N,S;Journal of Crystal Growth;1991-02
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