Background energy level spectroscopy in GaP using thermal release of trapped space charge in Schottky barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654407
Reference10 articles.
1. Effects of Deep Centers on n‐Type GaP Schottky Barriers
2. Variation of Electrical Properties with Zn Concentration in GaP
3. Luminescent Time Decay of Excitons Bound to Zn–O Complexes in Gap
4. Capacitance Energy Level Spectroscopy of Deep‐Lying Semiconductor Impurities Using Schottky Barriers
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1. Thermostimulated impurity conduction in characterization of electrodeposited Cu2O films;Journal of Applied Physics;1991-02-15
2. Theoretical approach to the effect of impurity conduction on thermostimulated conductivity in semi-insulating materials;Solid-State Electronics;1991-02
3. On the application of the photo-EPR technique to the studies of photoionization, DAP recombination, and non-radiative recombination processes;physica status solidi (a);1985-07-16
4. VP Related Defects in Diffused GaP:N Diodes;Physica Status Solidi (a);1984-08-16
5. Plastic‐deformation‐induced deep level in GaP;Applied Physics Letters;1983-10-15
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